1SV290B Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Variable Capacitance Diode Silicon Epitaxial Planar Type CATV Tuning

TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV290B
1SV290B
CATV Tuning
Unit: mm
• High capacitance ratio: C_{2 V}/C_{25 V} = 16 (typ.)
• Low series resistance: r_s = 0.92 Ω (typ.)
• Excellent C-V characteristics, and small tracking error.
• Suitable for small tuners
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
Peak reverse voltage
Junction temperature
Storage temperature range
V_R
V_RM
T_j
T_stg
30
V
35 (R_L = 10 kΩ)
V
125
°C
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
―
JEITA
―
TOSHIBA
1-1G1A
Weight: 0.0014 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Capacitance
Capacitance
Capacitance ratio
Series resistance
V_R
I_R
C_{2 V}
C_{25 V}
C_{2 V}/C_{25 V}
r_s
I_R = 1 μA
V_R = 28 V
V_R = 2 V, f = 1 MHz
V_R = 25 V, f = 1 MHz
⎯
V_R = 5 V, f = 470 MHz
Note 1: Available in matched group for capacitance to 2%.
C (max) − C (min) _{<= 0.02}
C (min)
(V_R = 2~25 V)
Marking
Min Typ. Max Unit
30
⎯
⎯
V
⎯
⎯
10
nA
41
45 49.5 pF
2.5
2.8
3.2
pF
14.8 16
⎯
⎯
⎯ 0.92 1.05 Ω
1
2007-11-01