1SV270_14 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type

TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV270
1SV270
VCO for UHF Band Radio
Unit: mm
• High capacitance ratio: C1V / C4V = 2.0 (typ.)
• Low series resistance: rs = 0.28 Ω (typ.)
• Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
Junction temperature
Storage temperature range
V_R
10
V
T_j
125
°C
T_stg
−55 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Reverse voltage
Reverse current
Capacitance
Capacitance
Capacitance ratio
Series resistance
Symbol
Test Condition
V_R
I_R
C_1V
C_4V
C_1V / C_4V
r_s
I_R = 1 μA
V_R = 10 V
V_R = 1 V, f = 1 MHz
V_R = 4 V, f = 1 MHz
―
V_R = 1 V, f = 470 MHz
Marking
JEDEC
―
JEITA
―
TOSHIBA
1-1E1A
Weight: 0.004 g (typ.)
Min Typ. Max Unit
10
―
―
V
―
―
3
nA
15
16
17
pF
7.3
8.0
8.7
pF
1.8
2.0
―
―
― 0.28 0.5
Ω
Start of commercial production
1993-02
1
2014-12-22