1SV262_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – CATV Tuning

TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV262
1SV262
CATV Tuning
Unit: mm
• High capacitance ratio: C2 V/C25 V = 12.5 (typ.)
• Low series resistance: rs = 0.6 Ω (typ.)
• Excellent C-V characteristics, and small tracking error.
• Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
Peak reverse voltage
Junction temperature
Storage temperature range
V_R
V_RM
T_j
T_stg
34
V
36 (R_L = 10 kΩ)
V
125
°C
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
―
JEITA
―
TOSHIBA
1-1E1A
Weight: 0.004 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Capacitance
Capacitance
Capacitance ratio
Capacitance ratio
Series resistance
V_R
I_R = 1 μA
I_R
V_R = 32 V
C2 V
V_R = 2 V, f = 1 MHz
C25 V V_R = 25 V, f = 1 MHz
C2 V/C25 V
⎯
C25 V/C28 V
⎯
r_s
V_R = 5 V, f = 470 MHz
Note 1: Available in matched group for capacitance to 2.0%.
C (max) − C (min)
C (min)
<= _{0.02 (VR = 2~25 V)}
Min Typ. Max Unit
34
⎯
⎯
V
⎯
⎯
10
nA
33 35.5 38
pF
2.6 2.85 3.0
pF
12.0 12.5 ⎯
⎯
1.03 ⎯
⎯
⎯
⎯
0.6 0.8
Ω
Marking
1
2007-11-01