1SV257 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – Variable Capacitance Diode Silicon Epitaxial Planar Type VCO For UHF Ratio

TOSHIBA
Discrete Semiconductors
Variable Capacitance Diode
Silicon Epitaxial Planar Type
VCO For UHF Ratio
Features
• Ultra Low Series Resistance : r_s = 0.2Ω(Typ.)
• Useful for Small Size Set
Absolute Maximum Ratings (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Reverse Voltage
Junction Temperature
Storage Temperature Range
V_R
15
V
T_j
125
°C
T_stg
-55 ~ 125
°C
1SV257
Unit in mm
Electrical Characteristics (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Reverse Voltage
Reverse Current
Capacitance
Capacitance
Capacitance Ratio
Series Resistance
V_R
I_R
C2V
C10V
C2V/C10V
I_R = 1µA
V_R = 15V
V_R = 2V, f = 1MHz
V_R = 10V, f = 1MHz
–
r_s
V_R = 5V, f = 470MHz
MIN.
15
–
14
5.5
2.0
–
TYP.
–
–
15
6
2.5
0.2
MAX.
–
3
16
6.5
–
0.4
UNIT
V
nA
pF
pF
–
Ω
Marking
TOSHIBA CORPORATION
1/2