1SV245_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type

TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV245
1SV245
UHF SHF Tuning
Unit: mm
• High capacitance ratio: C2 V/C25 V = 5.7 (typ.)
• Low series resistance: rs = 1.2 Ω (typ.)
• Excellent C-V characteristics, and small tracking error.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
Peak reverse voltage
Junction temperature
Storage temperature range
V_R
V_RM
T_j
T_stg
30
V
35 (R_L = 10 kΩ)
V
125
°C
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
JEDEC
―
JEITA
―
TOSHIBA
1-1E1A
Weight: 0.004 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Capacitance
Capacitance
Capacitance ratio
Series resistance
V_R
I_R
C2 V
C25 V
C2 V/C25 V
I_R = 1 μA
V_R = 28 V
V_R = 2 V, f = 1 MHz
V_R = 25 V, f = 1 MHz
⎯
r_s
V_R = 1 V, f = 470 MHz
Note 1: Unites are compounded in one package and are matched to 6.0%.
C (max) − C (min) _{<= 0.06 (VR = 2~25 V)}
C (min)
Min Typ. Max Unit
30
⎯
⎯
V
⎯
⎯
10
nA
3.31 ⎯ 4.55 pF
0.61 ⎯ 0.77 pF
5.0 5.7
6.5
⎯
⎯
1.2 2.0
Ω
Marking
1
2007-11-01