1SV229 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – VARIABLE CAPACITANCE DIODE (VCO FOR UHF BAND RADIO)

TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV229
VCO for UHF Band Radio
· Ultra low series resistance: rs = 0.2 Ω (typ.)
· Useful for small size set
Maximum Ratings (Ta = 25°C)
Characteristics
Reverse voltage
Junction temperature
Storage temperature range
Symbol
V_R
T_j
T_stg
Rating
Unit
15
V
125
°C
-55~125
°C
1SV229
Unit: mm
Electrical Characteristics (Ta = 25°C)
Characteristics
Reverse voltage
Reverse current
Capacitance
Capacitance
Capacitance ratio
Series resistance
Symbol
Test Condition
V_R
I_R
C_{2 V}
C_{10 V}
C_{2 V}/C_{10 V}
r_s
I_R = 1 mA
V_R = 15 V
V_R = 2 V, f = 1 MHz
V_R = 10 V, f = 1 MHz
¾
V_R = 5 V, f = 470 MHz
Marking
JEDEC
―
JEITA
―
TOSHIBA
1-1E1A
Weight: 0.004 g (typ.)
Min Typ. Max Unit
15
¾
¾
V
¾
¾
3
nA
14
15
16
pF
5.5
6
6.5
pF
2.0
2.5
¾
¾
¾
0.2 0.4
W
1
2003-04-02