1SV225_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Electronic Tuning Applications of FM Receivers

TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV225
1SV225
Electronic Tuning Applications of FM Receivers
Unit: mm
• Low series resistance: r_s = 0.35 (typ.)
• Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
Junction temperature
Storage temperature range
V_R
32
V
T_j
125
°C
T_stg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
SC-59
TOSHIBA
1-3G1F
Weight: 0.013 g (typ.)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Reverse voltage
Reverse current
Capacitance
Capacitance
Capacitance ratio
Series resistance
V_R
I_R
C_{3 V}
C_{30 V}
C_{3 V}/C_{30 V}
r_s
I_R = 10 μA
V_R = 30 V
V_R = 3 V, f = 1 MHz
V_R = 30 V, f = 1 MHz
⎯
V_R = 3 V, f = 100 MHz
32
⎯
⎯
V
⎯
⎯
50
nA
(Note 1) 18.5 19.7 21
pF
(Note 1) 6.6
7.2
7.7
pF
(Note 1) 2.6
2.9
⎯
(Note 1) ⎯ 0.35 0.5
Ω
Note 1: Characteristics between anode 1 and anode 2
Marking
1
2007-11-01