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1SV215_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – CATV Tuning | |||
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TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV215
1SV215
CATV Tuning
Unit: mm
⢠High capacitance ratio: C2 V/C25 V = 10.5 (typ.)
⢠Low series resistance: rs = 0.6 ⦠(typ.)
⢠Excellent C-V characteristics, and small tracking error.
⢠Useful for small size tuner.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
Peak reverse voltage
Junction temperature
Storage temperature range
VR
VRM
Tj
Tstg
30
V
35 (RL = 10 kΩ)
V
125
°C
â55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (âHandling
Precautionsâ/âDerating Concept and Methodsâ) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
â
JEITA
â
TOSHIBA
1-1E1A
Weight: 0.004 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Capacitance
Capacitance
Capacitance ratio
Series resistance
VR
IR
C2 V
C25 V
C2 V/C25 V
rs
IR = 1 μA
VR = 28 V
VR = 2 V, f = 1 MHz
VR = 25 V, f = 1 MHz
â¯
VR = 5 V, f = 470 MHz
Note 1: Available in matched group for capacitance to 2.5%.
C (max) â C (min) <= 0.025
C (min)
(VR = 2~25 V)
Marking
Min Typ. Max Unit
30
â¯
â¯
V
â¯
â¯
10
nA
26
â¯
32
pF
2.5
â¯
3.2
pF
9.5 10.5 â¯
â¯
â¯
0.6 0.8
Ω
1
2007-11-01
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