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1SV214_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TV Tuning
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV214
1SV214
TV Tuning
Unit: mm
• High capacitance ratio: C2 V/C25 V = 6.5 (typ.)
• Low series resistance: rs = 0.4 Ω (typ.)
• Excellent C-V characteristics, and small tracking error.
• Useful for small size tuner.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
Peak reverse voltage
Junction temperature
Storage temperature range
VR
VRM
Tj
Tstg
30
V
35 (RL = 10 kΩ)
V
125
°C
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
―
JEITA
―
TOSHIBA
1-1E1A
Weight: 0.004 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Capacitance
Capacitance
Capacitance ratio
Series resistance
VR
IR = 1 μA
IR
VR = 28 V
C2 V
VR = 2 V, f = 1 MHz
C25 V VR = 25 V, f = 1 MHz
C2 V/C25 V
⎯
rs
VR = 5 V, f = 470 MHz
Note 1: Units are compounded in one package and are matched to 2.5%.
C (max) − C (min) <= 0.025
C (min)
(VR = 2~25 V)
Marking
Min Typ. Max Unit
30
⎯
⎯
V
⎯
⎯
10
nA
14.16 ⎯ 16.25 pF
2.11 ⎯ 2.43 pF
5.90 6.50 7.15 ⎯
⎯
0.4 0.55
Ω
1
2007-11-01