1SS427 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Ultra-High Speed Switching Applications

TOSHIBA Diode Silicon Epitaxial Planar Type
1SS427
1SS427
Ultra-High Speed Switching Applications
z 2-pin compact package: Ideal for high-density mounting
z Low forward voltage: V_{F (3)} = 0.98 V (typ.)
z Fast reverse recovery time: t_rr = 1.6 ns (typ.)
z Small total capacitance: C_T = 0.5 pF (typ.)
Unit: mm
0.6±0.05
A
Absolute Maximum Ratings (Ta = 25°C)
0.2
0.07^M A ^±0.05
0.1±0.05
Characteristics
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10 ms)
Power dissipation
Junction temperature
Storage temperature
Symbol
V_RM
V_R
I_FM
I_O
I_FSM
P
T_j
T_stg
Rating
Unit
85
V
80
V
200
mA
100
mA
1
A
150 *
mW
150
°C
−55 to 150
°C
0.48^+-00..0032
fSC
JEDEC
―
JEITA
―
TOSHIBA
1-1L1A
Weight: 0.6 mg (typ.)
* : Mounted on a glass epoxy circuit board of 20 mm × 20 mm,
Cu pad dimension of 4 mm × 4 mm.
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_{R (1)}
I_{R (2)}
C_T
t_rr
Test
Circuit
Test Condition
― I_F = 1 mA
― I_F = 10 mA
― I_F = 100 mA
― V_R = 30 V
― V_R = 80 V
― V_R = 0, f = 1 MH_z
― I_F = 10 mA, Fig.1
Min Typ. Max Unit
― 0.62 ―
― 0.75 ―
V
― 0.98 1.20
―
―
0.1
μA
―
―
0.5
―
0.5
―
pF
―
1.6
―
ns
1
2008-01-30