1SS424_14 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS424
High-Speed Switching Applications
z Low forward voltage
: V_{F (3)} = 0.50 V (typ.)
1SS424
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
V_RM
V_R
I_FM
30
V
20
V
300
mA
Average forward current
I_O
200
mA
Surge current (10 ms)
I_FSM
1
A
Power dissipation
P*
150
mW
Junction temperature
T_j
125
°C
Storage temperature range
T_stg
−55 to 125
°C
Operating temperature range
T_opr
−40 to 100
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
―
TOSHIBA
1-1G1A
Weight: 1.4 mg (typ.)
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Mounted on a glass-epoxy circuit board of 20 × 20 mm,
pad dimensions of 4 × 4 mm.
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_{R (1)}
I_{R (2)}
C_T
Test
Circuit
Test Condition
― I_F = 1 mA
― I_F = 5 mA
― I_F = 200 mA
― V_R = 10 V
― V_R = 20 V
― V_R = 0, f = 1 MHz
Min Typ. Max Unit
― 0.18 ―
― 0.23 ―
V
― 0.42 0.5
―
―
30
μA
―
―
50
―
20
―
pF
Equivalent Circuit (Top View)
Marking
S8
Start of commercial production
2004-08
1
2014-03-01