1SS423 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Ultra-High-Speed Switching Applications

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS423
Ultra-High-Speed Switching Applications
• Small package
• Low forward voltage: V_{F (3)} = 0.56 V (typ.)
• Low reverse current: I_R = 5 μA (max)
1SS423
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
V_RM
45
V
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10 ms)
V_R
I_FM
I_O
I_FSM
40
V
200*
mA
100*
mA
1*
A
1.ANODE1
2.CATHODE2
3.CATHODE1
ANODE2
Power dissipation
P
100*
mW
Junction temperature
T_j
125
°C
JEDEC
―
Storage temperature range
T_stg
−55~125
°C
JEITA
―
Operating temperature range
T_opr
−40~100
°C
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
1-2S1C
Weight: 0.0024 g (typ.)
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: This is the absolute maximum rating for a single diode . Where two diodes are used,
the absolute maximum rating per diode is 75% that for the single diode.
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
(between cathode and anode)
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_R
C_T
Test Condition
I_F = 1 mA
I_F = 10 mA
I_F = 100 mA
V_R = 40 V
V_R = 0, f = 1 MH_z
Min Typ. Max Unit
― 0.28 ―
― 0.36 ―
V
― 0.56 0.62
―
―
5
μA
―
15
―
pF
Marking
W9
1
2007-11-01