1SS421 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – High-Speed Switching Application

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS421
1SS421
High-Speed Switching Application
Unit: mm
Low forward voltage: V_{F (3)} = 0.50V (max)
Abusolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
V_R
30
V
Maximum (peak) forward current
I_FM
300
mA
Average forward current
I_O
200
mA
Surge current (10ms)
I_FSM
1
A
Power dissipation
P*
150
mW
Junction temperature
T_j
125
°C
Storage temperature range
T_stg
−55 to 125
°C
Operating temperature range
T_opr
−40 to 100
°C
*:
Mounted on a glass epoxy circuit board of 20 mm × 20 mm,
Cu pad dimension of 4 mm × 4 mm.
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
JEDEC
―
JEITA
―
TOSHIBA
1-1G1A
Weight: 1.4 mg (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Forward voltage
Reverse current
Total capacitance
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_{R (1)}
I_{R (2)}
C_T
Test
Circuit
Test Condition
― I_F = 1 mA
― I_F = 5 mA
― I_F = 200 mA
― V_R = 10 V
― V_R = 30 V
― V_R = 0, f = 1 MHz
Min Typ. Max Unit
― 0.18 ―
― 0.22 ―
V
― 0.44 0.5
―
―
20
μA
―
―
30
⎯
19
⎯
pF
Equivalent Circuit (top view)
Marking
S7
1
2008-02-02