1SS420_05 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Silicon Epitaxial Schottky Barrier Type High-Speed Switching Applications

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS420
High-Speed Switching Applications
• Low reverse current: I_R = 5 µA (max)
1SS420
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
V_RM
35
V
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10 ms)
Power dissipation
V_R
I_FM
I_O
I_FSM
P*
30
V
300
mA
200
mA
1
A
150
mW
Junction temperature
T_j
125
°C
Storage temperature range
T_stg
−55~125
°C
Operating temperature range
T_opr
−40~100
°C
*
Mounted on a glass-epoxy circuit board of 20 × 20 mm,
pad dimensions of 4 × 4 mm.
JEDEC
―
JEITA
―
TOSHIBA
1-1G1A
Weight: 0.0014 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_R
C_T
Test
Circuit
Test Condition
― I_F = 1 mA
― I_F = 10 mA
― I_F = 200 mA
― V_R = 30 V
― V_R = 0, f = 1 MH_z
Equivalent Circuit (Top View)
Marking
Min Typ. Max Unit
― 0.29 ―
― 0.36 ―
V
― 0.52 0.6
―
―
5
µA
―
20
―
pF
S6
1
2005-03-23