1SS420CT Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – High-Speed Switching Applications

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS420CT
High-Speed Switching Applications
• Low reverse current: I_R = 5 μA (max)
0.6±0.05
1SS420CT
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Symbol
V_RM
V_R
I_FM
Rating
Unit
35
V
30
V
300
mA
0.38
+0.02
-0.03
0.5±0.03
0.05±0.03
Average forward current
I_O
200
mA
Surge current (10 ms)
I_FSM
1
A
Power dissipation
P
150 *
mW
Junction temperature
Storage temperature range
T_j
125
°C
T_stg
−55 to 125
°C
CST2
Operating temperature range
T_opr
−40 to 100
°C
JEDEC
―
*
Mounted on a glass-epoxy circuit board of 20 mm × 20 mm,
JEITA
―
pad dimensions of 4 mm × 4 mm.
TOSHIBA
1-1P1A
Weight: 0.7 mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Forward voltage
Reverse current
Total capacitance
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_R
C_T
Test
Circuit
Test Condition
― I_F = 1 mA
― I_F = 10 mA
― I_F = 200 mA
― V_R = 30 V
― V_R = 0 V, f = 1 MH_z
Min Typ. Max Unit
― 0.29 ―
― 0.36 ―
V
― 0.52 0.6
―
―
5
μA
―
20
―
pF
Equivalent Circuit (top view)
Marking
85
1
2009-01-08