1SS420 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – High-Speed Switching Applications

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS420
High-Speed Switching Applications
• Low reverse current: I_R = 5 μA (max)
1SS420
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
V_RM
35
V
Reverse voltage
V_R
30
V
Maximum (peak) forward current
I_FM
300
mA
Average forward current
I_O
200
mA
Surge current (10 ms)
I_FSM
1
A
Power dissipation
P*
150
mW
Junction temperature
T_j
125
°C
Storage temperature range
T_stg
−55~125
°C
Operating temperature range
T_opr
−40~100
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
―
TOSHIBA
1-1G1A
Weight: 0.0014 g (typ.)
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*
Mounted on a glass-epoxy circuit board of 20 × 20 mm,
pad dimensions of 4 × 4 mm.
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_R
C_T
Test
Circuit
Test Condition
― I_F = 1 mA
― I_F = 10 mA
― I_F = 200 mA
― V_R = 30 V
― V_R = 0, f = 1 MH_z
Min Typ. Max Unit
― 0.29 ―
― 0.36 ―
V
― 0.52 0.6
―
―
5
μA
―
20
―
pF
Equivalent Circuit (Top View)
Marking
S6
1
2007-11-01