1SS419 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – High-Speed Switching Applications

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS419
High-Speed Switching Applications
1SS419
Unit: mm
• Small package
• Low forward voltage: V_{F (3)} = 0.56 V (typ.)
• Low reverse current: I_R = 5 μA (max)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
V_RM
45
V
sESC
Reverse voltage
V_R
40
V
Maximum (peak) forward current
I_FM
200
mA
Average forward current
I_O
100
mA
Surge current (10 ms)
I_FSM
1
A
Power dissipation
P*
100
mW
Junction temperature
T_j
125
°C
Storage temperature range
T_stg
−55~125
°C
JEDEC
―
Operating temperature range
T_opr
−40~100
°C
JEITA
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TOSHIBA
1-1K1A
Weight: 0.0011 g (typ.)
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*
Mounted on a glass-epoxy circuit board of 20 × 20 mm,
pad dimensions of 4 × 4 mm.
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_R
C_T
Test Condition
I_F = 1 mA
I_F = 10 mA
I_F = 50 mA
V_R = 40 V
V_R = 0, f = 1 MH_z
Min Typ. Max Unit
― 0.28 ―
― 0.36 ―
V
― 0.56 0.62
―
―
5
μA
―
15
―
pF
Equivalent Circuit (Top View)
Marking
X
1
2007-11-01