1SS418 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – High Speed Switching Application

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS418
High Speed Switching Application
• Low forward voltage
: V_{F (3)} = 0.23V (typ.)@ I_F = 5mA
1SS418
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
V_RM
V_R
35
V
30
V
sESC
Maximum (peak) forward current
I_FM
200
mA
Average forward current
I_O
100
mA
Surge current (10ms)
I_FSM
1
A
Power dissipation
P*
100
mW
Junction temperature
T_j
125
°C
Storage temperature range
T_stg
−55 ~ 125
°C
Operating temperature range
T_opr
−40 ~ 100
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
―
TOSHIBA
1-1K1A
Weight: 0.0011g(Typ.)
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*
Mounted on a glass epoxy circuit board of 20 × 20mm,
pad dimension of 4 × 4mm.
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Reverse current
Total capacitance
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_R
I_R
C_T
Test
Circuit
Test Condition
― I_F = 1mA
― I_F = 5mA
― I_F = 100mA
― V_R = 10V
― V_R = 30V
― V_R = 0, f = 1MH_z
Min Typ. Max Unit
― 0.18 ―
― 0.23 ―
V
― 0.38 0.50
―
―
20
μA
―
―
50
μA
―
15
―
pF
Equivalent Circuit (Top View)
Marking
W
1
2007-11-01