1SS417_04 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – High Speed Switching Application

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS417
1SS417
High Speed Switching Application
• Small package
• Low forward voltage: V_{F (3)} = 0.56V (typ.)
• Low reverse current: I_R = 5µA (Max.)
0.6±0.05
Unit: mm
A
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
V_RM
V_R
I_FM
I_O
45
V
40
V
200
mA
100
mA
Surge current (10ms)
Power dissipation
I_FSM
P*
1
A
100
mW
Junction temperature
T_j
125
°C
Storage temperature range
T_stg
−55~125
°C
Operating temperature range
T_opr
−40~100
°C
*
Mounted on a glass epoxy circuit board of 20 × 20 mm,
pad dimension of 4 × 4 mm.
0.2
±0.05
0.07 M A
0.1±0.05
+0.02
0.48 _-0.03
fSC
JEDEC
―
JEITA
―
TOSHIBA
1-1L1A
Weight: 0.6mg(typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_R
C_T
Test
Circuit
Test Condition
― I_F = 1mA
― I_F = 10mA
― I_F = 50mA
― V_R = 40V
― V_R = 0, f = 1MH_z
Min Typ. Max Unit
― 0.28 ―
― 0.36 ―
V
― 0.56 0.62
―
―
5
µA
―
15
―
pF
quivalent Circuit (Top View)
Marking
X
1
2004-05-26