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1SS417 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – High Speed Switching Application | |||
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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS417
1SS417
High Speed Switching Application
⢠Small package
⢠Low forward voltage: VF (3) = 0.56V (typ.)
⢠Low reverse current: IR = 5μA (Max.)
0.6±0.05
Unit: mm
A
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
0.2
±0.05
0.07 M A
0.1±0.05
Maximum (peak) reverse voltage
Reverse voltage
VRM
VR
45
V
40
V
0.48
+0.02
-0.03
Maximum (peak) forward current
IFM
200
mA
Average forward current
IO
100
mA
Surge current (10ms)
IFSM
1
A
Power dissipation
Junction temperature
P*
100
mW
fSC
Tj
125
°C
Storage temperature range
Operating temperature range
Tstg
â55~125
°C
JEDEC
Topr
â40~100
°C
JEITA
TOSHIBA
â
â
1-1L1A
Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.6mg(typ.)
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*
Mounted on a glass epoxy circuit board of 20 Ã 20 mm,
pad dimension of 4 Ã 4 mm.
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR
CT
Test
Circuit
Test Condition
â IF = 1mA
â IF = 10mA
â IF = 50mA
â VR = 40V
â VR = 0, f = 1MHz
Min Typ. Max Unit
â 0.28 â
â 0.36 â
V
â 0.56 0.62
â
â
5
μA
â
15
â
pF
Equivalent Circuit (Top View)
Marking
X
1
2007-11-01
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