1SS416CT Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – High Speed Switching Application

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS416CT
High Speed Switching Application
z Small package
z Low forward voltage: V_F = 0.23 V (typ.) @I_F = 5 mA
0.6±0.05
1SS416CT
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
V_RM
35
V
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
V_R
I_FM
I_O
I_FSM
30
V
200
mA
100
mA
1
A
Power dissipation
P*
100
mW
Junction temperature
T_j
125
°C
Storage temperature range
T_stg
−55 to 125
°C
Operating temperature range
T_opr
−40 to 100
°C
*:
Mounted on a glass epoxy circuit board of 20 mm × 20 mm,
pad dimension of 4 mm × 4 mm.
0.38
+0.02
-0.03
0.5±0.03
0.05±0.03
CST2
JEDEC
―
JEITA
―
TOSHIBA
1-1P1A
Weight: 0.7 mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Forward voltage
Reverse current
Total capacitance
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_R(1)
I_R(2)
C_T
Test
Circuit
Test Condition
― I_F = 1 mA
― I_F = 5 mA
― I_F = 100 mA
― V_R = 10 V
― V_R = 30 V
― V_R = 0 V, f = 1 MHz
Min Typ. Max Unit
― 0.18 ―
― 0.23 ―
V
― 0.38 0.50
―
―
20
μA
―
―
50
―
15
―
pF
1
2009-01-08