1SS416 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – High Speed Switching Application

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS416
1SS416
High Speed Switching Application
z Small package
z Low forward voltage: V_F = 0.23V (typ.) @I_F = 5mA
0.6±0.05
Unit: mm
A
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Maximum (peak) reverse voltage
Symbol
V_RM
Rating
Unit
35
V
0.2
±0.05
0.07 M A
0.1±0.05
Reverse voltage
V_R
30
V
Maximum (peak) forward current
I_FM
200
mA
0.48
+0.02
-0.03
Average forward current
I_O
100
mA
Surge current (10ms)
I_FSM
1
A
Power dissipation
P*
100
mW
Junction temperature
Storage temperature range
T_j
125
°C
T_stg
−55∼125
°C
fSC
Operating temperature range
T_opr
−40∼100
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
―
TOSHIBA
1-1L1A
Weight: 0.6mg(typ.)
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*:
Mounted on a glass epoxy circuit board of 20 × 20mm,
pad dimension of 4 × 4mm.
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_R(1)
I_R(2)
CT
Test
Circuit
Test Condition
― I_F = 1mA
― I_F = 5mA
― I_F = 100mA
― V_R = 10V
― V_R = 30V
― VR = 0, f = 1MHz
Min Typ. Max Unit
― 0.18 ―
― 0.23 ―
V
― 0.38 0.50
―
―
20
μA
―
―
50
―
15
―
pF
Equivalent Circuit (Top View)
Marking
W
1
2007-11-01