1SS413CT Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Schottky Barrier Diode Silicon Epitaxial

Schottky Barrier Diode Silicon Epitaxial
1SS413CT
1. Applications
• High-Speed Switching
2. Features
(1) Low forward voltage : V_F(3) = 0.50 V (typ.)
(2) Low reverse current : I_R = 0.5 µA (max)
(3) Small total capacitance : C_t = 3.9 pF (typ.)
3. Packaging and Internal Circuit
1SS413CT
CST2
1: Cathode
2: Anode
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T_a = 25 )
Characteristics
Symbol Note
Rating
Unit
Peak reverse voltage
V_RM
25
V
Reverse voltage
V_R
20
Peak forward current
I_FM
100
mA
Average rectified current
I_O
50
mA
Power dissipation
P_D (Note 1)
100
mW
Non-repetitive peak forward surge current
I_FSM (Note 2)
1
A
Junction temperature
T_j
125

Storage temperature
T_stg
-55 to 125

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on a glass epoxy circuit board of 20 mm × 20 mm, Pad dimension of 4 mm × 4 mm.
Note 2: Measured with a 10 ms pulse.
Start of commercial production
1999-02
1
2014-03-11
Rev.1.0