|
1SS413 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – High Speed Switching Application | |||
|
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS413
1SS413
High Speed Switching Application
0.6±0.05
Unit: mm
A
⢠Low forward voltage
: VF (3) = 0.50V (typ.)
⢠Low reverse current
: IR= 0.5μA (max)
⢠Small total capacitance : CT = 3.9pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
0.2
±0.05
0.07 M A
0.1±0.05
Characteristic
Symbol
Rating
Unit
0.48
+0.02
-0.03
Maximum (peak) reverse Voltage
VRM
25
V
Reverse voltage
VR
20
V
Maximum (peak) forward current
IFM
Average forward current
IO
100
mA
50
mA
fSC
Surge current (10ms)
Power dissipation
IFSM
1
A
P*
100
mW
JEDEC
â
Junction temperature
Tj
125
°C
JEITA
â
Storage temperature range
Tstg
â55~125
°C
TOSHIBA
1-1L1A
Note: Using continuously under heavy loads (e.g. the application of high Weight:0.0006g(typ.)
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*
Mounted on a glass epoxy circuit board of 20 Ã 20 mm,
pad dimension of 4 Ã 4 mm.
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR
CT
Test
Circuit
Test Condition
â IF = 1mA
â IF = 5mA
â IF = 50mA
â VR = 20V
â VR = 0, f = 1MHz
Equivalent Circuit (Top View)
Marking
Y
Min Typ. Max Unit
â 0.33 â
â 0.38 â
V
â 0.50 0.55
â
â
0.5
μA
â
3.9
â
pF
1
2007-11-01
|
▷ |