1SS412_14 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TOSHIBA Diode Silicon Epitaxial Planar Type

TOSHIBA Diode Silicon Epitaxial Planar Type
1SS412
General-Purpose Rectifier Applications
1SS412
Unit: imm
z Low forward voltage
z Low reverse current
z Small total capacitance
z Small package
: V_F = 1.0 V (typ.)
: I_R = 0.1 nA (typ.)
: C_T = 3.0 pF (typ.)
: SC-70
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
V_RM
85
V
Reverse voltage
V_R
80
V
Maximum (peak) forward current
I_FM
300 *
mA
Average forward current
I_O
100 *
mA
Surge current (10 ms)
Power dissipation
I_FSM
P
1*
A
100
mW
Junction temperature
Storage temperature range
T_j
150
°C
JEDEC
T_stg
−55 to 150
°C
JEITA
―
SC-70
Note: Using continuously under heavy loads (e.g. the application of high ^TOSHIBA
1-2P1C
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.006 g (typ.)
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating. Total rating = unit rating × 0.7
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
(between cathode and anode)
Symbol
V_F
I_R
C_T
Test
Circuit
Test Condition
― I_F = 100 mA
― V_R = 80 V
― V_R = 0, f = 1 MHz
Min Typ. Max Unit
―
1.0 1.3
V
―
0.1
10
nA
―
3.0
―
pF
Equivalent Circuit (Top View)
Marking
P9
Start of commercial production
2002-08
1
2014-03-01