1SS406_14 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS406
High Speed Switching Application
1SS406
Unit: mm
z Low forward voltage
z Low reverse current
z Small total capacitance
: V_{F (3)} = 0.50V (typ.)
: I_R= 0.5μA (max)
: C_T = 3.9pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
V_RM
25
V
Reverse voltage
V_R
20
V
Maximum (peak) forward current
I_FM
100
mA
Average forward current
I_O
50
mA
Surge current (10ms)
Power dissipation
I_FSM
P*
1
A
200
mW
USC
Junction temperature
T_j
125
°C
Storage temperature range
T_stg
−55 to 125
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
―
TOSHIBA
1-1E1A
Weight: 0.004g(Typ.)
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Mounted on a glass epoxy circuit board of 20 × 20 mm,
pad dimension of 4 × 4 mm.
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_R
C_T
Test
Circuit
Test Condition
― I_F = 1mA
― I_F = 5mA
― I_F = 50mA
― V_R = 20V
― V_R = 0, f = 1MH_z
Min Typ. Max Unit
― 0.33 ―
― 0.38 ―
V
― 0.50 0.55
―
―
0.5
μA
―
3.9
―
pF
Equivalent Circuit (Top View)
Marking
1
A7
Start of commercial production
2001-11
2014-03-01