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1SS405 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – High Speed Switching Application | |||
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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS405
High Speed Switching Application
z Low forward voltage
z Low reverse current
z Small total capacitance
: VF (3) = 0.50V (typ.)
: IR= 0.5μA (max)
: CT = 3.9pF (typ.)
1SS405
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
VRM
25
V
Reverse voltage
VR
20
V
Maximum (peak) forward current
IFM
100
mA
Average forward current
IO
50
mA
Surge current (10ms)
IFSM
1
A
Power dissipation
P*
150
mW
Junction temperature
Tj
125
°C
JEDEC
â
Storage temperature range
Tstg
â55~125
°C
JEITA
â
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TOSHIBA
1-1G1A
Weight: 1.4mg(Typ.)
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*:
Mounted on a glass epoxy circuit board of 20 Ã 20 mm,
pad dimension of 4 Ã 4 mm.
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR
CT
Test
Circuit
Test Condition
â IF = 1mA
â IF = 5mA
â IF = 50mA
â VR = 20V
â VR = 0, f = 1MHz
Min Typ. Max Unit
â 0.33 â
â 0.38 â
V
â 0.50 0.55
â
â
0.5
μA
â
3.9
â
pF
Equivalent Circuit (Top View)
Marking
A7
1
2007-11-01
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