1SS404_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Silicon Epitaxial Schottky Barrier Type

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS404
1SS404
High Speed Switching Applications
• Two-pin small packages are suitable for higher mounting densities
• Low forward voltage : V_{F (3)} = 0.38 V (typ.)
• Low reverse current: I_R = 50 μA (max)
• Small total capacitance: C_T = 46 pF (typ.)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Maximum (peak) reverse voltage
V_RM
25
V
Reverse voltage
V_R
20
V
Maximum (peak) forward current
I_FM
700
mA
Average forward current
I_O
300
mA
Power dissipation
Junction temperature
P
200 (Note 1) mW
T_j
125
°C
USC
Storage temperature range
T_stg
−55 ~ 125
°C
Operating temperature range
T_opr
−40 ~ 100
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEITA
TOSHIBA
―
1-1E1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.004 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on a glass epoxy board of 20 mm × 20 mm,
pad dimension 4 mm × 4 mm.
Marking
Equivalent Circuit (top view)
S5
Electrical Characteristics (Ta = 25°C)
Characteristics
Forward voltage
Reverse current
Total capacitance
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_R
C_T
Test Condition
I_F = 1 mA
I_F = 10 mA
I_F = 300 mA
V_R = 20 V
V_R = 0, f = 1 MHz
1
Min Typ. Max Unit
⎯ 0.16 ⎯
⎯ 0.22 ⎯
V
⎯ 0.38 0.45
⎯
⎯
50
μA
⎯
46
⎯
pF
2007-11-01