1SS402_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – High Speed Switching Applications

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS402
High Speed Switching Applications
1SS402
Unit in mm
z Two independent diodes are mounted on four-pin ultra-small packages that
are suitable for higher mounting densities.
z Low forward voltage
: V_{F (3)} = 0.50V (typ.)
z Low reverse current
z Small total capacitance
: I_R= 0.5μA (max)
: C_T = 3.9pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge Current (10ms)
Power dissipation
Junction temperature
Storage temperature range
V_RM
V_R
I_FM
I_O
I_FSM
P
T_j
T_stg
25
V
20
V
100 *
mA
50 *
mA
1*
A
JEDEC
―
100 *
mW
JEITA
―
125
°C
TOSHIBA
1-2U1A
−55~125
°C
Weight: 0.006 g(typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating. Total rating = Unit rating × 1.5
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_{R (1)}
C_T
Test
Circuit
Test Condition
― I_F = 1mA
― I_F = 5mA
― I_F = 50mA
― V_R = 20V
― V_R = 0, f = 1MHz
Min Typ. Max Unit
― 0.33 ―
― 0.38 ―
V
― 0.50 0.55
―
―
0.5
μA
―
3.9
5.0
pF
Pin Assignment (Top View)
Marking
A7
1
2007-11-01