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1SS401_14 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type | |||
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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS401
High Speed Switching Applications
1SS401
Unit: mm
z Low forward voltage
z Low reverse current
z Small total capacitance
: VF (3) = 0.38 V (typ.)
: IR = 50μA (max)
: CT = 46 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Power dissipation
Junction temperature
Storage temperature range
Operating temperature range
VRM
25
V
VR
20
V
IFM
700
mA
IO
300
mA
JEDEC
P
100
mW
JEITA
â
SC-70
Tj
125
°C
TOSHIBA
1-2P1D
Tstg
â55 to 125
°C
Weigh: 0.006 g(typ.)
Topr
â40 to 100
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR
CT
Test
Circuit
Test Condition
â IF = 1mA
â IF = 10mA
â IF = 300mA
â VR = 20V
â VR = 0, f = 1MHz
Min Typ. Max Unit
â 0.16 â
â 0.22 â
V
â 0.38 0.45
â
â
50
μA
â
46
â
pF
Pin Assignment (Top View)
Marking
Start of commercial production
1999-03
1
2014-03-01
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