1SS401_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – High Speed Switching Applications

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS401
High Speed Switching Applications
1SS401
Unit in mm
z Low forward voltage
z Low reverse current
z Small total capacitance
: V_{F (3)} = 0.38 V (typ.)
: I_R = 50μA (max)
: C_T = 46 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Power dissipation
Junction temperature
Storage temperature range
Operating temperature range
V_RM
25
V
V_R
20
V
I_FM
700
mA
I_O
300
mA
JEDEC
P
100
mW
JEITA
―
SC-70
T_j
125
°C
TOSHIBA
1-2P1D
T_stg
−55~125
°C
Weigh: 0.006 g(typ.)
T_opr
−40~100
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_R
C_T
Test
Circuit
Test Condition
― I_F = 1mA
― I_F = 10mA
― I_F = 300mA
― V_R = 20V
― V_R = 0, f = 1MHz
Min Typ. Max Unit
― 0.16 ―
― 0.22 ―
V
― 0.38 0.45
―
―
50
μA
―
46
―
pF
Pin Assignment (Top View)
Marking
1
2007-11-01