1SS398_15 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TOSHIBA Diode Silicon Epitaxial Planar Diode

TOSHIBA Diode Silicon Epitaxial Planar Diode
1SS398
High-Voltage, High-Speed Switching Applications
1SS398
Unit: mm
 Small package
: SC-59
 Low forward voltage
: VF = 1.0 V (typ.) @ IF = 100 mA
 Fast reverse recovery time : trr = 0.5 μs (typ.)
 Small total capacitance : CT = 2.5 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
VRM
420
V
Reverse voltage
VR
400
V
Maximum (peak) forward current
IFM
300 *
mA
Average forward current
IO
100 *
mA
Surge current (10ms)
IFSM
2*
A
Power dissipation
P
150
mW
Junction temperature
Tj
125
°C
JEDEC
TO-236MOD
Storage temperature range
Tstg
−55 to 125
°C
JEITA
SC-59
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TOSHIBA
1-3G1G
Weight: 0.012 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating. Total rating = unit rating × 0.7
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
Test Condition
Min Typ. Max Unit
VF (1)
VF (2)
IR (1)
IR (2)
CT
trr
IF = 10 mA
―
IF = 100 mA
―
VR = 300 V
―
VR = 400 V
―
VR = 0 V, f = 1 MHz
―
IF = 10 mA
(Fig.1) ―
0.8
―
V
1.0 1.3
― 0.05
μA
―
0.1
2.5
5.0
pF
0.5
―
μs
Start of commercial production
1995-10
1
2015-02-23