1SS397_07 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – High Voltage, High Speed Switching Applications

TOSHIBA Diode Silicon Epitaxial Planar Diode
1SS397
High Voltage, High Speed Switching Applications
1SS397
Unit: mm
z Low forward voltage
: V_F = 1.0V (typ.)
z High voltage
: V_R = 400V (min.)
z Fast reverse recovery time : t_rr = 0.5μs (typ.)
z Small total capacitance : C_T = 2.5pF (typ.)
z Small package
: SC-70
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
V_RM
420
V
Reverse voltage
V_R
400
V
Maximum (peak) forward current
I_FM
300
mA
Average forward current
I_O
100
mA
Surge current (10ms)
I_FSM
2
A
Power dissipation
Junction temperature
P
100
mW
JEDEC
T_j
125
°C
EIAJ
―
SC-70
Storage temperature range
T_stg
−55∼125
°C
TOSHIBA
1-2P1D
Weight: 0.006g
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
V_{F (1)}
V_{F (2)}
I_{R (1)}
I_{R (2)}
C_T
t_rr
Test
Circuit
Test Condition
― I_F = 10mA
― I_F = 100mA
― V_R = 300V
― V_R = 400V
― V_R = 0, f = 1MH_z
― I_F = 10mA
(Fig.1)
Min Typ. Max Unit
―
0.8
―
V
―
1.0 1.3
―
―
0.1
μA
―
―
1.0
―
2.5 5.0
pF
―
0.5
―
μs
1
2007-11-01