1SS392_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – High Speed Switching Application

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS392
High Speed Switching Application
1SS392
Unit: mm
z Low forward voltage
z Low reverse current
z Small package
: V_{F (3)} = 0.54V (typ.)
: I_R = 5μA (max)
: SC-59
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
V_RM
45
V
Reverse voltage
V_R
40
V
Maximum (peak) forward current
I_FM
300 *
mA
Average forward current
I_O
100 *
mA
Surge current (10ms)
I_FSM
1*
A
Power dissipation
P
150 *
mW
Junction temperature
T_j
125
°C
Storage temperature range
T_stg
−55∼125
°C
JEDEC
TO-236MOD
Operating temperature range
T_opr
−40∼100
°C
EIAJ
SC-59
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TOSHIBA
Weight: 0.012g
1-3G1F
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* : Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_R
C_T
Test
Circuit
Test Condition
― I_F = 1mA
― I_F = 10mA
― I_F = 100mA
― V_R = 40V
― V_R = 0, f = 1MH_z
Min Typ. Max Unit
― 0.28 ―
― 0.36 ―
V
― 0.54 0.60
―
―
5
μA
―
18
25
pF
1
2007-11-01