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1SS391_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Low Voltage High Speed Switching | |||
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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS391
1SS391
Low Voltage High Speed Switching
z Low forward voltage
z Small package
: VF (2) = 0.23V (typ.) @IF = 5mA
: SC-61
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
VRM
15
V
Reverse voltage
VR
10
V
Maximum (peak) forward current
IFM
200 *
mA
Average forward current
IO
100 *
mA
Surge current (10ms)
IFSM
1*
A
Power dissipation
P
150 *
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
â55â¼125
°C
Operating temperature range
Topr
â40â¼100
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
JEDEC
EIAJ
TOSHIBA
Weight: 0.013g
â
SC-61
2-3J1A
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*:
Unit rating. Total rating = unit rating à 1.5
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR
CT
Test
Circuit
Test Condition
â IF = 1mA
â IF = 5mA
â IF = 100mA
â VR = 10V
â VR = 0, f = 1MHz
Min Typ. Max Unit
â 0.18 â
V
â
0.23 0.30
V
â
0.35 0.50
V
â
â
20
μA
â
20
40
pF
Marking
1
2007-11-01
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