|
1SS389_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – High Speed Switching Application | |||
|
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS389
High Speed Switching Application
1SS389
Unit: mm
z Small package
z Low forward voltage: VF = 0.23V (typ.) @IF = 5mA
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
Reverse voltage
Maximum (peak) forward current
VRM
VR
IFM
15
V
10
V
200
mA
Average forward current
IO
100
mA
Surge current (10ms)
IFSM
1
A
Power dissipation
P*
150
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
â55â¼125
°C
Operating temperature range
Topr
â40â¼100
°C
JEDEC
â
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
EIAJ
TOSHIBA
Weight: 1.4mg
â
1-1G1A
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*:
Mounted on a glass epoxy circuit board of 20 Ã 20mm,
pad dimension of 4 Ã 4mm.
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR
CT
Test
Circuit
Test Condition
â IF = 1mA
â IF = 5mA
â IF = 100mA
â VR = 10V
â VR = 0, f = 1MHz
Min Typ. Max Unit
â 0.18 â
â
0.23 0.30
V
â 0.35 0.50
â
â
20
μA
â
20
40
pF
Equivalent Circuit (Top View)
Marking
1
2007-11-01
|
▷ |