1SS388_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – High Speed Switching Application

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS388
High Speed Switching Application
1SS388
Unit: mm
z Small package
z Low forward voltage: V_{F (3)} = 0.54V (typ.)
z Low reverse current: I_R = 5μA (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
V_RM
45
V
Reverse voltage
V_R
40
V
Maximum (peak) forward current
I_FM
300
mA
Average forward current
I_O
100
mA
Surge current (10ms)
I_FSM
1
A
Power dissipation
P*
150
mW
Junction temperature
T_j
125
°C
Storage temperature range
T_stg
−55~125
°C
JEDEC
―
Operating temperature range
T_opr
−40~100
°C
EIAJ
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TOSHIBA
Weight: 1.4mg
1-1G1A
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*
Mounted on a glass epoxy circuit board of 20 × 20 mm,
pad dimension of 4 × 4 mm.
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_R
C_T
Test
Circuit
Test Condition
― I_F = 1mA
― I_F = 10mA
― I_F = 50mA
― V_R = 10V
― V_R = 0, f = 1MH_z
Min Typ. Max Unit
― 0.28 ―
― 0.36 ―
V
― 0.54 0.60
―
―
5
μA
―
18
25
pF
Equivalent Circuit (Top View)
Marking
1
2007-11-01