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1SS387TPH3F Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TOSHIBA Diode Silicon Epitaxial Planar Type | |||
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TOSHIBA Diode Silicon Epitaxial Planar Type
1SS387
Ultra High Speed Switching Applications
1SS387
Unit: mm
z Compact 2-pin package â ideal for high-density mounting
z Low forward voltage
: VF (3) = 0.98V (typ.)
z Fast reverse recovery time : trr = 1.6ns (typ.)
z Small total capacitance : CT = 0.5pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
VRM
VR
IFM
85
V
80
V
200
mA
Average forward current
IO
100
mA
Surge current (10ms)
IFSM
1
A
Power dissipation
P
150 *
mW
Junction temperature
Storage temperature
Tj
125
°C
JEDEC
â
Tstg
â55â¼125
°C
JEITA
â
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TOSHIBA
1-1G1A
Weight: 1.4mg (typ)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Mounted on a glass epoxy circuit board of 20 Ã 20mm,
pad dimension of 4 Ã 4mm.
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF (1)
VF (2)
VF (3)
IR (1)
IR (2)
CT
trr
Test
Circuit
Test Condition
â IF = 1mA
â IF = 10mA
â IF = 100mA
â VR = 30V
â VR = 80V
â VR = 0, f = 1MHz
â IF = 10mA, Fig.1
Min Typ. Max Unit
â 0.62 â
â 0.75 â
V
â 0.98 1.20
â
â
0.1
μA
â
â
0.5
â
0.5 3.0
pF
â
1.6 4.0
ns
1
2007-11-01
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