1SS385_14 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS385
High Speed Switching
1SS385
Unit: mm
z Low forward voltage: V_{F (2)} = 0.23V (typ.) @I_F = 5mA
z Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
Reverse voltage
Maximum (peak) forward current
V_RM
V_R
I_FM
15
V
10
V
200 *
mA
Average forward current
I_O
100 *
mA
Surge current (10ms)
I_FSM
1*
A
Power dissipation
P
100
mW
Junction temperature
T_j
125
°C
Storage temperature range
T_stg
−55 to 125
°C
Operating temperature range
T_opr
−40 to 100
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
JEITA
―
TOSHIBA
1-2S1B
Weight: 2.4mg (typ.)
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
V_{F (1)}
VF (2)
V_{F (3)}
I_R
C_T
Test
Circuit
Test Condition
― I_F = 1mA
― IF = 5mA
― I_F = 100mA
― V_R = 10V
― V_R = 0, f = 1MH_z
Min Typ. Max Unit
― 0.18 ―
V
―
0.23 0.30
V
―
0.35 0.50
V
―
―
20
μA
―
20
40
pF
Equivalent Circuit (Top View)
Marking
Start of commercial production
1994-10
1
2014-03-01