1SS385F_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – High Speed Switching

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS385F
High Speed Switching
1SS385F
Unit: mm
z Low forward voltage: V_F = 0.23V (typ.) @I_F = 5mA
z Ultra-small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
V_RM
15
V
Reverse voltage
V_R
10
V
Maximum (peak) forward current
I_FM
200 (*)
mA
Average forward current
I_O
100 (*)
mA
Surge current (10ms)
I_FSM
1 (*)
A
Power dissipation
P
100 (*)
mW
Junction temperature
T_j
125
°C
Storage temperature range
T_stg
−55~125
°C
Operating temperature range
T_opr
−40~100
°C
JEDEC
―
EIAJ
―
Note: Using continuously under heavy loads (e.g. the application of high _TOSHIBA
―
temperature/current/voltage and the significant change in
Weight: 2.3 g
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*:
Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_R
C_T
Test
Circuit
Test Condition
― I_F = 1mA
― I_F = 5mA
― I_F = 100mA
― V_R = 10V
― V_R = 0, f = 1MH_z
Min. Typ. Max. Unit
― 0.18 ―
V
―
0.23 0.30
V
―
0.35 0.50
V
―
―
20
μA
―
20
40
pF
Equivalent Circuit (Top View)
Marking
1
2007-11-01