1SS385FV Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – High-Speed Switching Applications

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS385FV
1SS385FV
High-Speed Switching Applications
Unit: mm
z Low forward voltage: V_F = 0.23 V (typ.) @I_F = 5 mA
z Ultra-small package
1.2±0.05
0.8±0.05
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
1
2
3
Maximum (peak) reverse voltage
V_RM
15
V
Reverse voltage
V_R
10
V
Maximum (peak) forward current
I_FM
200 *
mA
Average forward current
I_O
100 *
mA
Surge current (10 ms)
Power dissipation
Junction temperature
I_FSM
P
T_j
1*
A
150**
mW
125
°C
VESM
1. ANODE 1
2. ANODE 2
3. CATHODE
Storage temperature range
T_stg
−55~125
°C
Operating temperature range
T_opr
−40~100
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
TOSHIBA
―
1-1Q1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating. Total rating = unit rating × 1.5
** : Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_R
C_T
Test
Circuit
Test Condition
― I_F = 1 mA
― I_F = 5 mA
― I_F = 100 mA
― V_R = 10 V
― V_R = 0, f = 1 MH_z
Min Typ. Max Unit
― 0.18 ―
V
―
0.23 0.30
V
―
0.35 0.50
V
―
―
20
μA
―
20
―
pF
Equivalent Circuit (Top View)
Marking
1
2007-11-01