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1SS383_15 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type | |||
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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS383
1SS383
Low Voltage High Speed Switching
Unit: mm
ï¬ Small package
ï¬ Composed of 2 independent diodes.
ï¬ Low forward voltage: VF (3) = 0.54V (typ.)
ï¬ Low reverse current: IR = 5μA (max)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
VRM
VR
IFM
IO
IFSM
P
45
V
40
V
300 *
mA
100 *
mA
1*
A
100 *
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
â55 to 125
°C
JEDEC
â
Operating temperature range
Topr
â40 to 100
°C
JEITA
TOSHIBA
â
1-2U1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.006g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*:
Unit rating. Total rating = unit rating à 1.5
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR
CT
Test Condition
IF = 1mA
IF = 10mA
IF = 100mA
VR = 40V
VR = 0, f = 1MHz
Min Typ. Max Unit
â 0.28 â
V
â 0.36 â
V
â 0.54 0.60
V
â
â
5
μA
â
18
25
pF
Pin Assignment (Top View)
Marking
Start of commercial production
1994-09
1
2015-01-15
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