1SS382_14 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TOSHIBA Diode Silicon Epitaxial Planar Type

TOSHIBA Diode Silicon Epitaxial Planar Type
1SS382
1SS382
Ultra High Speed Switching Application
Unit: mm
 Small package
 Composed of 2 independent diodes.
 Low forward voltage
: VF (3) = 0.92V (typ.)
 Fast reverse recovery time : Trr = 1.6ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
V_RM
85
V
Reverse voltage
V_R
80
V
Maximum (peak) forward current
I_FM
300 *
mA
Average forward current
I_O
100 *
mA
Surge current (10ms)
I_FSM
2*
A
Power dissipation
P
100
mW
Junction temperature
T_j
125
°C
Storage temperature range
T_stg
−55 to 125
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
TOSHIBA
―
1-2U1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.006g (typ.)
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*:
Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_{R (1)}
I_{R (2)}
C_T
t_rr
Test
Circuit
Test Condition
― I_F = 1mA
― I_F = 10mA
― I_F = 100mA
― V_R = 30V
― V_R = 80V
― V_R = 0, f = 1MHz
― I_F = 10mA, Fig.1
Min Typ. Max Unit
― 0.61 ―
V
― 0.74 ―
V
―
0.92 1.20
V
―
―
0.1 μA
―
―
0.5 μA
―
0.9
2.0
pF
―
1.6
4.0
ns
Pin Assignment (Top View)
Marking
Start of commercial production
1994-09
1
2014-10-15