1SS379_14 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TOSHIBA Diode Silicon Epitaxial Planar Type

TOSHIBA Diode Silicon Epitaxial Planar Type
1SS379
General Purpose Rectifier Applications
z Small package
z Low forward voltage
z Low reverse current
z Small total capacitance
: SC-59
: V_F = 1.0V (typ.)
: I_R = 0.1nA (typ.)
: C_T = 3.0pF (typ.)
1SS379
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature range
V_RM
V_R
I_FM
I_O
I_FSM
P
T_j
T_stg
85
V
80
V
300 *
mA
100 *
mA
2*
A
150
mW
125
°C
−55 to 125
°C
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
*:
Unit rating. Total rating = unit rating × 0.7
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
1-3G1G
Weight: 0.012g (typ.)
Start of commercial production
1994-01
1
2014-03-01