1SS379_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – General Purpose Rectifier Applications

TOSHIBA Diode Silicon Epitaxial Planar Type
1SS379
General Purpose Rectifier Applications
1SS379
Unit in mm
z Low forward voltage
z Low reverse current
z Small total capacitance
z Small package
: V_F = 1.0V (typ.)
: I_R = 0.1nA (typ.)
: C_T = 3.0pF (typ.)
: SC-59
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
V_RM
V_R
I_FM
I_O
I_FSM
P
85
V
80
V
300 *
mA
100 *
mA
2*
A
150
mW
Junction temperature
Storage temperature range
T_j
125
°C
JEDEC
T_stg
−55∼125
°C
EIAJ
TO-236MOD
SC-59
Note:
Using continuously under heavy loads (e.g. the application of high TOSHIBA
1-3G1G
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.012g
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*:
Unit rating. Total rating = unit rating × 0.7
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
V_F
I_R
C_T
Test
Circuit
Test Condition
― I_F = 100mA
― V_R = 80V
― V_R = 0, f = 1MH_z
Min. Typ. Max. Unit
―
1.0 1.3
V
―
0.1
10
nA
―
3.0 6.0
pF
Equivalent Circuit (Top View)
Marking
1
2007-11-01