1SS367_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – High Speed Switching Application

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS367
High Speed Switching Application
1SS367
Unit: mm
z Small package
z Low forward voltage: V_F = 0.23V (typ.) @I_F = 5mA
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
V_RM
15
V
Reverse voltage
V_R
10
V
Maximum (peak) forward current
I_FM
200
mA
Average forward current
I_O
100
mA
Surge current (10ms)
I_FSM
1
A
Power dissipation
P*
200
mW
Junction temperature
T_j
125
°C
Storage temperature
T_stg
−55~125
°C
Operating temperature range
T_opr
−40~100
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
EIAJ
TOSHIBA
Weight: 0.004g
―
1-1E1A
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Mounted on a glass epoxy circuit board of 20 × 20 mm
Pad dimension of 4 × 4 mm.
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_R
C_T
Test
Circuit
Test Condition
― I_F = 1mA
― I_F = 5mA
― I_F = 100mA
― V_R = 10V
― V_R = 0, f = 1MHz
Min Typ. Max Unit
― 0.18 ―
―
0.23 0.30
V
― 0.35 0.50
―
―
20
μA
―
20
40
pF
Equivalent Circuit (Top View)
Marking
1
2007-11-01