1SS362_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Ultra High Speed Switching Application

TOSHIBA Diode Silicon Epitaxial Planar Type
1SS362
1SS362
Ultra High Speed Switching Application
z Small package
z Low forward voltage
: V_F = 0.97V (typ.)
z Fast reverse recovery time : t_rr = 1.6ns (typ.)
z Small total capacitance : C_T = 0.5pF (typ.)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
V_RM
85
V
Reverse voltage
V_R
80
V
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
I_FM
I_O
I_FSM
P
240 *
mA
80 *
mA
1*
A
100
mW
Junction temperature
T_j
125
°C
Storage temperature
T_stg
−55∼125
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
EIAJ
TOSHIBA
Weight: 2.4mg
―
1-2S1C
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Unit rating. Total rating = unit rating × 0.7
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_{R (1)}
I_{R (2)}
C_T
t_rr
Test
Circuit
Test Condition
― I_F = 1mA
― I_F = 10mA
― I_F = 100mA
― V_R = 30V
― V_R = 80V
― V_R = 0, f = 1MHz
― I_F = 10mA, Fig.1
Min Typ. Max Unit
― 0.63 ―
― 0.75 ―
V
― 0.97 1.20
―
―
0.1
μA
―
―
0.5
―
0.5 3.0
pF
―
1.6 4.0
ns
Marking
1
2007-11-01