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1SS362FV Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Ultra-High-Speed Switching Applications | |||
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TOSHIBA Diode Silicon Epitaxial Planar Type
1SS362FV
Ultra-High-Speed Switching Applications
z Small package
z Excellent in forward current and forward voltage
characteristics:
VF (3) = 0.97 V (typ.)
z Fast reverse recovery time: trr = 1.6 ns (typ.)
z Small total capacitance: CT = 0.9 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
1SS362FV
Unit: mm
1.2±0.05
0.8±0.05
1
2
3
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
85
V
Reverse voltage
VR
80
V
Maximum (peak) forward current
IFM
300 *
mA
Average forward current
Surge current (10 ms)
Power dissipation
Junction temperature
IO
IFSM
P
Tj
100 *
mA
1*
A
1.ANODE1
150 **
mW
2.CATHODE2
3.CATHODE1
150
°C
VESM
ANODE2
Storage temperature range
Tstg
â55 to 150
°C
JEDEC
â
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
JEITA
â
TOSHIBA
1-1Q1A
Weight: 1.5 mg (typ.)
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating. Total rating = unit rating à 0.7
**: Mounted on an FR4 board (25.4 mm à 25.4 mm à 1.6 mm (t))
0.5 mm
0.45 mm
0.45 mm
0.4 mm
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF (1)
VF (2)
VF (3)
IR (1)
IR (2)
CT
trr
Test
Circuit
Test Condition
Min
â IF = 1 mA
â
â IF = 10 mA
â
â IF = 100 mA
â
â VR = 30 V
â
â VR = 80 V
â
â VR = 0 V, f = 1 MHz
â
â IF = 10 mA
(Fig. 1) â
1
Typ. Max Unit
0.63 â
0.75 â
V
0.97 1.20
â
0.1
â
0.5
μA
0.9
â
pF
1.6
4.0
ns
2009-04-14
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