1SS361FV Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Ultra-High-Speed Switching Applications

1SS361FV
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS361FV
Ultra-High-Speed Switching Applications
z Small package
z Excellent in forward current and forward voltage
characteristics
: V_{F (3)} = 0.9 V (typ.)
z Fast reverse recovery time : t_rr = 1.6 ns (typ.)
z Small total capacitance : C_T = 0.9 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
1.2±0.05
0.8±0.05
1
2
3
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
V_RM
85
V
Reverse voltage
V_R
80
V
Maximum (peak) forward current
I_FM
300 *
mA
Average forward current
I_O
100 *
mA
Surge current (10 ms)
I_FSM
2*
A
Power dissipation
Junction temperature
Storage temperature range
P
150 **
mW
T_j
150
°C
T_stg
−55∼150
°C
VESM
1. ANODE 1
2. ANODE2
3. CATHODE
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
―
temperature, etc.) may cause this product to decrease in the
TOSHIBA
1-1Q1A
reliability significantly even if the operating conditions (i.e. operating _{Weight: 1.5 mg (typ.)}
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating. Total rating = unit rating × 1.5
** : Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)
0.5 mm
0.45 mm
0.45 mm
0.4 mm
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_{R (1)}
I_{R (2)}
C_T
t_rr
Test Condition
I_F = 1 mA
I_F = 10 mA
I_F = 100 mA
V_R = 30 V
V_R = 80 V
V_R = 0, f = 1 MH_z
I_F = 10 mA
(Fig. 1)
Min Typ. Max Unit
― 0.60 ―
― 0.72 ―
V
― 0.90 1.2
―
―
0.1
―
―
0.5
μA
―
0.9
―
pF
―
1.6 4.0
ns
1
2007-11-01