1SS361F Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Ultra High Speed Switching Applications

TOSHIBA Diode Silicon Epitaxial Planar Type
1SS361F
Ultra High Speed Switching Applications
z Small package
: 1608 Flat lead
z Excellent in forward current and forward voltage
characteristics
: VF (3) = 0.9V (typ.)
z Fast reverse recovery time : trr = 1.6ns (typ.)
z Small total capacitance : CT = 0.9pF (typ.)
1SS361F
Unit in mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
V_RM
85
V
Reverse voltage
V_R
80
V
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
I_FM
I_O
I_FSM
P
300 (*)
mA
100 (*)
mA
2 (*)
A
100
mW
Junction temperature
T_j
125
°C
Storage temperature range
T_stg
−55∼125
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
EIAJ
TOSHIBA
―
1-2SA1B
temperature, etc.) may cause this product to decrease in the
Weight: 2.3 mg
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(*) Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_{R (1)}
I_{R (2)}
C_T
t_rr
Test
Circuit
Test Condition
― I_F = 1mA
― I_F = 10mA
― I_F = 100mA
― VR = 30V
― VR = 80V
― VR = 0, f = 1MHz
― IF = 10mA
(Fig.1)
Min Typ. Max Unit
― 0.60 ―
― 0.72 ―
V
― 0.90 1.20
―
―
0.1
―
―
0.5
μA
―
0.9
3.0
pF
―
1.6
4.0
ns
書式変更: フォント : (英)
Arial, (日) ＭＳ Ｐゴシック
1
2007-11-01